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. . . for use in power amplifier and switching circuits, -- excellent safe area limits. Complement to NPN 2N5191, 2N5192
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
Silicon PNP Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
OFF CHARACTERISTICS
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
*MAXIMUM RATINGS
REV 7 Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) Characteristic Rating Characteristic Symbol TJ, Tstg VCEO VCB VEB PD IC IB Symbol JC 2N5194 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 60 60 - 65 to + 150 40 320 1.0 4.0 5.0 3.12 Max 2N5195 80 80 VCEO(sus) Symbol ICBO ICEO IEBO ICEX Watts mW/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Min
60 80
--
-- --
-- -- -- --
-- --
4 AMPERE POWER TRANSISTORS SILICON PNP 60 - 80 VOLTS
*Motorola Preferred Device
2N5194 2N5195 *
CASE 77-08 TO-225AA TYPE
Max
1.0
0.1 0.1
0.1 0.1 2.0 2.0
1.0 1.0
-- --
Order this document by 2N5194/D
(continued)
mAdc
mAdc
mAdc
mAdc
Unit
Vdc
1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
2N5194 2N5195
* Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle
*ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
2
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (1) (IC = 1.5 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) DC Current Gain (1) (IC = 1.5 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) 0.1 0.004 hFE , DC CURRENT GAIN (NORMALIZED) 0.3 1.0 0.7 0.5 10 7.0 5.0 0.2 2.0 3.0 0.4 0.8 1.2 1.6 2.0 0 0.05 0.07 0.1 IC = 10 mA TJ = 150C 0.007 0.01
v
0.2
TJ = 25C
25C
0.3
Characteristic
0.02
0.5 0.7
100 mA
v 2.0%.
- 55C
1.0
0.03
Figure 2. Collector Saturation Region
0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
2.0
3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
2N5194 2N5195 2N5194 2N5195
Motorola Bipolar Power Transistor Device Data
1.0 A 20 VCE(sat) VBE(on) Symbol hFE fT 30 0.5 50 70 1.0 Min 2.0 25 20 10 7.0 -- -- -- 100 3.0 A Max 100 80 -- -- 1.2 0.6 1.4 -- 2.0 VCE = 2.0 V VCE = 10 V 200 300 3.0 4.0 MHz Unit Vdc Vdc -- 500
2N5194 2N5195
V, TEMPERATURE COEFFICIENTS (mV/C) 2.0 TJ = 25C 1.6 VOLTAGE (VOLTS) + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 VB for VBE *VC for VCE(sat) *APPLIES FOR IC/IB hFE @ VCE TJ = - 65C to +150C
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP)
1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. "On" Voltage
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
Figure 4. Temperature Coefficients
103 VCE = 30 Vdc IC, COLLECTOR CURRENT ( A) 102 TJ = 150C 101 100 10-1 10- 2 100C
107 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES 104 103 102 20 IC ICES
REVERSE 25C ICES 0
FORWARD
(TYPICAL ICES VALUES OBTAINED FROM FIGURE 5)
10- 3 + 0.4 + 0.3 + 0.2 + 0.1
- 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 0.6
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Collector Cut-Off Region
Figure 6. Effects of Base-Emitter Resistance
TURN-ON PULSE VBE(off) Vin 0 APPROX -11 V
VCC Vin
RC RB SCOPE CAPACITANCE (pF)
500 TJ = 25C 300 200
t1 t2
Cjd << Ceb APPROX + 9.0 V + 4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0%
100 70 50
Ceb Ccb
Vin APPROX -11 V t3 TURN-OFF PULSE
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Switching Time Equivalent Test Circuit
Figure 8. Capacitance
Motorola Bipolar Power Transistor Device Data
3
2N5194 2N5195
2.0 1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 tr @ VCC = 10 V tr @ VCC = 30 V t, TIME ( s) IC/IB = 10 TJ = 25C 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 tf @ VCC = 30 V tf @ VCC = 10 V ts IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C
td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.05 0.07 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP)
2.0
3.0 4.0
0.03 0.02 0.05 0.07 0.1
0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP)
2.0
3.0 4.0
Figure 9. Turn-On Time
Figure 10. Turn-Off Time
10 IC, COLLECTOR CURRENT (AMP) 5.0 TJ = 150C 2.0 1.0 0.5 dc SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5194 2N5195 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 5.0 ms 1.0 ms 100 s
0.2 0.1 1.0
Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate I C - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on T J(pk) = 150_C. T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high-case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
Figure 11. Rating and Thermal Data Active-Region Safe Operating Area
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 SINGLE PULSE 0.01
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
D = 0.5 0.2
JC(max) = 3.12C/W
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 12. Thermal Response
4
Motorola Bipolar Power Transistor Device Data
2N5194 2N5195
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP PP PP
A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find JC(t), multiply the value obtained from Figure 12 by the steady state value JC.
t1 1/f DUTY CYCLE, D = t1 f = t1 tP PEAK PULSE POWER = PP
Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: T = r(t) x PP x JC = 0.27 x 50 x 3.12 = 42.2_C
Figure A
Motorola Bipolar Power Transistor Device Data
5
2N5194 2N5195
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-08 TO-225AA TYPE ISSUE V
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6
Motorola Bipolar Power Transistor Device Data
*2N5194/D*
2N5194/D

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